Conference

SiC MOSFET design considerations for reliable high voltage operation

Bibliographic Details
Title: SiC MOSFET design considerations for reliable high voltage operation
Authors: Losee, P. A., Bolotnikov, A., Yu, L. C., Dunne, G., Esler, D., Erlbaum, J., Rowden, B., Gowda, A., Halverson, A., Ghandi, R., Sandvik, P., Stevanovic, L., Hristov, R.
Source: 2017 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS),2017 IEEE International. :2A-2.1-2A-2.8 Apr, 2017
Relation: 2017 IEEE International Reliability Physics Symposium (IRPS)
ISSN: 19381891
DOI: 10.1109/IRPS.2017.7936254
Database: IEEE Xplore Digital Library