Strain-induced effects in advanced MOSFETs / Viktor Sverdlov.
"Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconduct...
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| Main Author: | |
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| Format: | Ebook |
| Language: | English |
| Published: |
Wien :
Springer,
[2011]
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| Series: | Computational microelectronics.
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| Subjects: | |
| Online Access: | Springer eBooks |
| Summary: | "Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given."--Publisher's website. |
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| Physical Description: | 1 online resource (xiv, 252 pages). |
| Bibliography: | Includes bibliographical references and index. |
| ISBN: | 3709103819 9783709103814 1283084392 9781283084390 3709103827 9783709103821 |