Nanoscale Redox Reaction at Metal/Oxide Interface : A Case Study on Schottky Contact and ReRAM / by Takahiro Nagata.
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according...
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| Main Author: | |
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| Format: | Ebook |
| Language: | English |
| Published: |
Tokyo :
Springer Japan : Imprint: Springer,
2020.
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| Edition: | 1st ed. 2020. |
| Series: | NIMS monographs,
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| Subjects: | |
| Online Access: | Springer eBooks |
| Summary: | Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure. |
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| Physical Description: | 1 online resource (95 pages). |
| ISBN: | 4431548491 9784431548492 4431548505 9784431548508 |
| ISSN: | 2197-8891 |